Prof. Beresford's research focuses on semiconductor nanostructures, including synthesis, modeling, integration with microelectronics, and applications. Molecular beam epitaxy, the growth of semiconductors in ultrahigh vacuum using thermal beams of pure elements allows precise control of layer thickness and composition on the level of monolayers. Projects include nanostructures produced by pattern-driven epitaxial growth and direct conversion of biomolecular signals into electronic information.
Rod Beresford earned degrees in electrical engineering from Yale University (B.S. 1979, M.S. 1981) and from Columbia University (Ph.D. 1990). He is currently Associate Provost and Professor of Engineering at Brown University. Prior positions held include editor-in-chief of VLSI Design, senior editor of Electronics, and engineer at the IBM T.J. Watson Research Center. He has published over 70 scientific and technical papers on semiconductor materials and devices. His current research emphasizes synthesis of nanostructures and microelectronic / microfluidic systems. He has worked on molecular beam epitaxial growth of III-V semiconductors since 1987 and serves on the Advisory Board of the North American MBE Conference. Prof. Beresford is also a senior member of the Institute of Electrical and Electronics Engineers, member of the American Physical Society, and Sigma Xi.
ROD BERESFORD, PhD, Electrical Engineering
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